Numerical Investigation of the Effect of Changing the Channel Diameter on Characteristic of Flicker Noise in Silicon Nanowire Field Effect Transistor

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Research areas:
Year:
2015
Type of Publication:
Article
Keywords:
Silicon Nanowire Field Effect Transistor, Gate- All-Around, Noise Power Spectral Density, Flicker Noise, Non-Equilibrium Green's Function
Authors:
MohammadrezaHariri; SeyedAli Sedigh Ziabari
Journal:
IJAIM
Volume:
3
Number:
4
Pages:
218-222
Month:
Jan.-Feb.
ISSN:
2320-5121
Abstract:
In this work, we study the effect of changing the channel diameteron characteristic of flicker noise in silicon nanowire field effect transistor through computer simulations. First, we study the fundamentals of flicker noise and obtain the calculation method of noise power spectral density in nanowire transistor. Then by using a powerful quantum simulation software based on non-equilibrium Green's function (NEGF), we obtain the current-voltage curves of gate-all-around silicon nanowire transistor. Next by using MATLAB software, we obtain the related curves to flicker noise power spectral density. The results show that by reducing the diameter of the silicon nanowire channel, the amount of flicker noise power spectral density of silicon nanowire transistor decreases which is due to the reduction of drain current.
Full text: IJAIMIRC-179.pdf

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