Numerical Investigation of the Effect of Changing Gate Oxide Material on Flicker Noise Characteristic in Carbon Nanotube Field Effect Transistor

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Research areas:
Year:
2015
Type of Publication:
Article
Keywords:
Carbon Nanotube Field Effect Transistor, Non- Equilibrium Green's Function Method, Power Spectral Density of Flicker Noise, Gate Oxide Material
Authors:
Mir Reza Daneshyar; Seyed Ali SedighZiabari
Journal:
IJAIM
Volume:
3
Number:
4
Pages:
189-192
Month:
Jan.-Feb.
ISSN:
2320-5121
Abstract:
Increasingly progress and rapid of technology, electric components take toward small-making that this reduction in dimensions, common FET are faced with challenges and limitations that they are related to advent of quantum phenomena. The carbon nanotube field effect transistors are one of the novelty equipment that is able to respond well to these constraints. We calculated and analyzed the Flicker noise characteristics of these components by using of related relations and we are investigated the effect of changing device gate oxide material on the noise level. To simulate the device we are used of Nonequilibrium Green's function (NEGF) method that in latest conducted research also are considered by researchers. The results of research show that power spectral density of Flicker noise is dependent on the current transistor and capacity of gate capacitance and any indicator that its change effect is in direction of increase the channel current and reduce the gate capacitance, will follow the increasing the Flicker noise. Specifically, we found that by keeping constant of other characteristics of the device and increase the dielectric constant of gate oxide, while output current of the transistor increase, Flicker noise remains almost constant that due to a decrease effect of gate capacitance increase on Flicker noise characteristics, with increasing dielectric constant of gate capacitance. This approach can be used to control Flicker noise in applications that require high current.

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